Self-Connected and Habitually Tilted Piezoelectric Nanorod Array

Abstract

We fabricated a self-connected and habitually tilted ZnO nanorod (NR) array, which is free of any patterning process for the connection of the NRs and is easily bent by a normal force. The vertically well-aligned ZnO NRs were grown by a strain relaxation process on MgO-buffered C-plane sapphire, and the remaining epitaxial ZnO wetting layer acted as a self-connecting layer of NRs. The epitaxial ZnO film on the step-terrace structured substrate caused the tilting angle from the surface normal direction (~0.2°) to match the step between the ZnO film and MgO-buffered C-plane sapphire, resulting in easy bending of the ZnO NRs by normal force. The unsymmetrical strain between the tensile and compressive stressed region in the habitually tilted ZnO NRs caused a gradient in the piezoelectric potential, resulting in an electrical field along the lateral direction of NR growth, resulting in the control of the current direction and level to be about 0.1 μA/cm(2) at 2 kgf normal force.