Abstract
Processes of defect formation are investigated in epitaxial PbSe:Tl films prepared by vacuum evaporation from molecular beams at various condensation temperatures from mixtures with a thallium content of 0–1.6 at. %. It is established that an increase in the content of the acceptor impurity in the film is accompanied by a significant increase in the number of selenium donor vacancies through the self-compensation mechanism. The thallium concentrations in the films are determined, along with the impurity transport coefficients, which vary from 0.82 to 0.44 as the condensation temperature varies from 250 °C to 350 °C. The carrier densities are calculated theoretically as a function of the thallium content in the films. The noticeable discrepancy between theory and experiment for thallium concentrations in the film NTl 400 °C to obtain films having a low carrier density.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
