Self-cleaning transparent thin-film photovoltaic device of perovskite LaAlO3 nanoparticle modified Cu2O/CeO2 nanoarray pn junction via surface plasma modification

Abstract

A self-cleaning transparent thin-film photovoltaic device composed of a perovskite LaAlO3 nanoparticle modified Cu2O/CeO2 nanoarray pn junction is prepared via an electrochemical sol–gel surface-plasma method. The fabricated Cu2O/LaAlO3/CeO2 thin-film photovoltaic device exhibits a transmittance of ∼80–85 % in the visible-light regime (λ > 520 nm), photovoltaic enhancement of ∼2.6 × 103 (photovoltaic conversion efficiency of ∼1.37 %), stable output over five months of cycling, and decent hydrophobicity (contact angle of 93.54°). These characteristics are mainly attributed to the perovskite LaAlO3 nanoparticles and surface plasma modification. The appropriate Fermi level and high quantum yield improves the carrier kinetic equilibrium, balancing the transparency and photovoltaic conversion efficiency (supported by the Density Functional Theory). Surface plasma modification further enhances the solar and carrier efficiencies, while producing decent self-cleaning performance. Additionally, the extra hole-related carriers produced by the Cu vacancies optimize the kinetic equilibrium and the orderly CeO2 array interval releases interfacial stress, providing good structural stability.