Self-catalyzed growth of GaSb nanowires at low reaction temperatures

Abstract

Thermal decomposition of Lewis acid–base adducts [ t-Bu 3Ga-Sb i-Pr 3] (1) and [ t-Bu 3Ga] 2[Sb 2Et 4] (2) in closed glass ampoules at temperatures between 250 and 350 °C yielded crystalline GaSb nanowires. Isolated GaSb nanowires were formed preferably at low decomposition temperatures, whereas dendritic-like growth was observed at higher decomposition temperatures. In addition, self-catalyzed growth of GaSb nanowires using 90 nm-sized Ga droplets, which were pre-deposited on Si(1 0 0) substrates, was achieved with the distibine Sb 2Et 4 at 250 °C.