Abstract
In this paper, we present the self assembly procedure as well as experimental results of a novel method for constructing well defined arrangements of self assembly metallic nano particles into sophisticated nano structures. The self assembly concept is based on focused ion beam (FIB) technology, where metallic nano particles are self assembled due to implantation of positive gallium ions into the insulating material (e.g., silica as in silicon on insulator wafers) that acts as intermediary layer between the substrate and the negatively charge metallic nanoparticles.
Highlights
Nano metric particles with different shapes and sizes have been attracting major attention in the past few years, due to their both unique optical as well as electronic characterization [1]
The field of nano particles can be divided into two basic parallel research directions: the research field that deals with analyzing the physical and chemical properties of the nano particles as a function of their size, shape, internal morphological, dielectric constant and aspect ratio [2,3,4], and the research field that deals with the self assembly of the nano metric particles
Please note that in contrast to research mentioned in [5], which focuses on applications of having nano particles at specific areas on the chip, in this paper we focus on the self assembly property of the proposed method as well as the chemical considerations that are required in order to enable the self assembly of the nano metric particles
Summary
Nano metric particles with different shapes and sizes have been attracting major attention in the past few years, due to their both unique optical as well as electronic characterization [1]. The method we present in this paper, for the construction of well defined arrangements of self assembly nano metric particles, combines these two approaches. We present a new approach for constructing a well defined arrangement of self assembly nano metric gold (Au) particles in sophisticated nano structures. Please note that in contrast to research mentioned in [5], which focuses on applications of having nano particles at specific areas on the chip, in this paper we focus on the self assembly property of the proposed method as well as the chemical considerations that are required in order to enable the self assembly of the nano metric particles. In contrast to [5], here we pay attention to various new devices that can benefit from the self assembly property (e.g., the electronic nanotransistor)
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