Self-assembling conditions of 4C10Sn nanoclusters in Ge:(C, Sn)

Abstract

Abstract Phase diagram of Ge:(C, Sn) describing the self-assembling conditions of 4C10Sn nanoclusters is represented. The smaller lattice strains caused by the isoelectronic impurity nanoclusters in comparison with the strains produced by isolated impurities are a reason of self-assembling. Occurrence of nanoclusters should be a result of continuous phase transition. At the carbon and Sn contents equal to 0.01 and 0.025, respectively, the fractions of Sn atoms situated in nanoclusters are 0.85 and 0.32 at 500 and 800 °C, respectively. At the bulk crystallization temperature of Ge self-assembling is insignificant.