Abstract
The continuous increase in capacity of non-volatile data storage systems will lead to bit densities of one bit per atom in 2020. Beyond this point, capacity can be increased by moving into the third dimension. We propose to use self-assembly of nanosized elements, either as a loosely organised associative network or into a cross-point architecture. When using principles requiring electrical connection, we show the need for transistor-based cross-talk isolation. Cross-talk can be avoided by reusing the coincident current magnetic ring core memory architecture invented in 1953. We demonstrate that self-assembly of three-dimensional ring core memories is in principle possible by combining corner lithography and anisotropic etching into single crystal silicon.
Highlights
The progress made in micro- and nano-technology industry over the last six decades has relied heavily on thin film technology
Since the tiniest units of information are found in non-volatile storage systems, the first encounter with those limits was found in that area, where it expressed itself in the thermal stability of written bits [1]
We will discuss the data storage roadmap and estimate when limits will be reached in Section 2, where we argue that solutions based on today’s three-dimensional storage systems are not capable to meet the density or price requirements
Summary
The progress made in micro- and nano-technology industry over the last six decades has relied heavily on thin film technology. To realize a three-dimensional storage system, the self-assembled array of nano-particles needs to be addressed from the outside. To address memory cells in a two-dimensional cross point architecture, we need to select two coordinates (bit and word lines, see Figure 2a).
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