Abstract
Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO2 and SrTiO3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (∼1012 inch−2). We systematically show that these devices allow precise engineering of the resistance states, thus enabling large on–off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.
Highlights
Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing
We first present the results of an optimum film: 20 at.% Sm-doped CeO2 (SDC):STO vertical heteroepitaxial nanocomposite (VHN) film grown on 0.5 wt.% Nb-doped 0.03 nm s À 1 by
Sm is the optimum doping concentration for the highest ionic conduction, and that growth rate is important for controlling crystalline perfection, both of these factors being very important for optimal device performance
Summary
Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. Metal oxide resistive switching structures have been widely studied for ReRAM They have several advantages over phase change memories, ferroelectric RAMs and magnetoresistive RAMs Various models have been proposed such as filamentary conduction, charge trapping defects states, trap-controlled space-charge-limited current and a change of a Schottky-like barrier[3,6] These effects are not mutually exclusive, the essential feature of all of the aforementioned models being the migration of oxygen vacancies and electrons under an applied electric field[3,7,8,9,10,11]. The structure allows information to be encoded in the confined ionic nanochannels which is closer to nature’s purely ionically based information transfer of chemical synapses and gives promise for future cognitive computing devices
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