Self-assembled nanobridge formation and spontaneous growth of metal-induced nanowires

Abstract

Self-assembled nanobridges, 30–80 nm in diameter and 1–2μm in length, have been fabricated using spontaneously grown nanowires by the metal-induced growth method at 575 °C. Ni as a catalyst was first deposited on SiO2-coated Si wafers. Si was sputtered from a Si target in a dc magnetron system. A solid-state reaction of Si with Ni provided highly linear nanowires. These nanowires have a single-crystal NiSi composition. Laterally propagated nanowires formed nanobridges passing through a vertically trenched region, without nanowires on the trench sidewall. The nanobridge formation is repeatably governed by the Ni deposition. The self-assembled nanobridge can be applied to form nanocontacts at relatively low temperatures.