Abstract

A novel strategy for the improvement in the sensing performance of p-type NiO is developed by employing the unique functional properties of self-assembled monolayers. Specifically, hole concentration near the surface of NiO nanowires (NWs) is modulated by terminal epoxy groups of the organosilane. This modulation leads to the increase in electron transfer from reducing gases to NWs surface. As a result, SAM-functionalized sensors showed 9-times higher response at low-temperature as compared to bare NiO NWs.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call