Abstract
In this study, self-assembled monolayer (SAM)-based gate dielectrics is applied to the fabrication of molybdenum disulfide (MoS2) field-effect transistors (FETs). A fabrication process of MoS2 FETs involves the selective formation of a SAM on aluminum oxides and the manual transfer of MoS2 flakes. A subthreshold slope (SS) of 69 mV/dec and no hysteresis were attained with the ultrathin SAM-based gate dielectrics. These results indicate the superior interfacial properties of the MoS2/SAM structure. Cross-sectional transmission electron microscopy revealed a flat and abrupt interface of the MoS2/SAM structure. It is found that the SAM-based gate dielectrics is applicable to the fabrication of low-voltage MoS2 FETs. This study opens up intriguing possibilities of SAM-based gate dielectrics in functional electronic devices.
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