Abstract

AbstractThe processing of Solid Grätzel Solar Cells (SGSCs) offers advantages of cost effective fabrication, possible flexible products, and high incident photon-to-electron conversion efficiencies (IPCE). In this paper, InP quantum dots (QDs) were synthesized and used as the photosensitizer to design new generation SGSCs. An organic p-type charge transport material (spiro-OMeTAD) was used as the hole-transport material (HTM). The InP QD has an average diameter of approximately 3nm. Preliminary research indicates that InP QD is a promising photosensitizer, which allows the sensitized SGSC TiO2 nanocrystalline cell to achieve over 400mV open circuit photovoltage, and a short-circuit current greater than 0.035mA/cm2 under the illumination of a solar simulator with an integrated light power of 58mW/cm2.

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