Abstract
AbstractWe are reporting the growth of 30 layer self‐assembled InGaAs/GaAs quantum dot infrared photodetector (QDIP) structures on Ge substrate where a proper interface formation procedure was followed to minimise the defect density at the GaAs/Ge interface. The interface formation technique includes deposition of a migration enhanced epitaxy (MEE) grown GaAs layer followed by deposition of a thin GaAs layer grown with multiple annealing steps in between. The structural and optical properties of the heterostructure are evaluated by Transmission Electron Microscopy (TEM) and Photoluminescence (PL). The I‐V curve for the grown device structure has been demonstrated. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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