Abstract
The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.
Highlights
In recent times, semiconductor quantum dots (QDs) have attracted increased attention because of their potential application in optoelectronic devices, such as, for quantum computation [1], lasers [2], single photon sources [3,4,5], charge storage devices [6] and single photon detectors [7]
A droplet of one material is deposited on a substrate and forms a nanostructure after annealing
We report on the use of ring-like nanostructures formed by droplet homo-epitaxy of GaAs/GaAs as a template for InAs QDs based on the SK growth mode
Summary
Semiconductor quantum dots (QDs) have attracted increased attention because of their potential application in optoelectronic devices, such as, for quantum computation [1], lasers [2], single photon sources [3,4,5], charge storage devices [6] and single photon detectors [7]. We report on the use of ring-like nanostructures formed by droplet homo-epitaxy of GaAs/GaAs as a template for InAs QDs based on the SK growth mode. We have discovered a way to form self-assembled InAs QDs using GaAs ring-like nanostructures as templates.
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