Abstract
Highly dense hexagonally ordered two-dimensional arrays of Si nanocrystals embedded inSiO2 nanodots were fabricated on a silicon substrate by using a self-assembled porous anodic aluminathin film as a masking layer through which electrochemical oxidation of the Si substrateand ultralow energy Si implantation took place. After removal of the alumina film and hightemperature annealing of the samples, hexagonally ordered Si nanocrystals embedded withinSiO2 nanodots were obtained, having sizes in the few tens of nanometer range. The fabricatedordered structures show significant potential for applications either in basic physicsexperiments or as building blocks for nanoelectronic and nanophotonic devices.
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