Abstract
Nanoscale hybrid molecular organic photodetectors based on self-assembled guanosine molecules conjugated to wide-bandgap GaN semiconductors has been realized in the ultraviolet wavelength regime. Metal-semiconductor-metal based photodetector is fabricated using ordering of modified guanosine based semiconductor nanowires which exhibit I-V characteristics with high current response and higher rectification ratio compared to Si based hybrid photodetectors. Photocurrent response of a two-terminal device shows the typical characteristics of a semiconductor photodiode with a cutoff wavelength at ∼325nm. The I-V characteristics have been elucidated using the induced polarization properties of self-assembled guanosine semiconductor.
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