Abstract
Nanoscale hybrid molecular organic photodetectors based on self-assembled guanosine molecules conjugated to wide-bandgap GaN semiconductors has been realized in the ultraviolet wavelength regime. Metal-semiconductor-metal based photodetector is fabricated using ordering of modified guanosine based semiconductor nanowires which exhibit I-V characteristics with high current response and higher rectification ratio compared to Si based hybrid photodetectors. Photocurrent response of a two-terminal device shows the typical characteristics of a semiconductor photodiode with a cutoff wavelength at ∼325nm. The I-V characteristics have been elucidated using the induced polarization properties of self-assembled guanosine semiconductor.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.