Abstract
The formation of well-ordered chains of InP quantum dots on GaAs (001) substrates by using self-organized In0.48Ga0.52P surface undulations as a template is demonstrated. The ordering requires neither stacked layers of quantum dots nor substrate misorientation. The pronounced alignment of the InP quantum dots along [1¯10] is driven by linear undulations in the surface material composition and strain in a In0.48Ga0.52P buffer layer. Although the In0.48Ga0.52P buffer layer is nearly perfectly lattice matched to the GaAs substrate on average, grazing incidence x-ray scattering indicates that the undulation regions are In rich. These regions of increased In content and consequent increased strain act as a template for subsequent InP quantum dot growth. When the buffer layer is grown at lower temperatures, the undulations do not form and the InP quantum dots show no ordering.
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