Abstract
We report the formation of CdTe self-assembled quantum dots (QDs) on high-quality ZnTe epilayers grown on a GaSb substrate by molecular-beam epitaxy. Reflection high-energy electron diffraction and atomic force microscopy measurements clearly show the formation of CdTe QDs. Photoluminescence (PL) measurements on ZnTe-capped CdTe QD samples show a wide distribution of dot size. The temperature dependence of PL spectra indicates much stronger exciton localization in QDs than that in quantum wells.
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