Abstract
Abstract Molybdenum nitrides Mo-N are considered as the hardest superconducting metal nitrides, which are usually prepared under high pressure and high temperature to obtain high superconducting transition temperature T c . Here, polycrystalline δ -MoN thin films with self-assembled c -axis orientation are directly deposited onto Si substrates by chemical solution deposition under ambient NH 3 annealing atmosphere without high pressure processing. The prepared δ -MoN/Si thin films show T c higher than 12 K. The normal state resistivity obeys electron-phonon scattering mechanism and can be well fitted by Bloch-Gruneisen expression. The results will provide an effective route to prepare large-area δ -MoN/Si thin films with high T c as well as a guidance to investigate the fundamental properties of polycrystalline δ -MoN thin films.
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