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Abstract
When CZTSSe is synthesized using a metal precursor, large voids of nonuniform size form at Mo back contact side. Herein, we demonstrate that the voids and CZTSSe in the lower part of the CZTSSe double layer can be controlled by using an Al2O3-patterned Mo substrate. The CZTSSe in the lower part self-aligns on the Mo-exposed area, while the voids self-align on the Al2O3-coated area. The origin of the self-alignment is expected to be the difference in bonding characteristics between liquid Sn and the metal or oxide surface, e.g., Al2O3. Good wettability generally forms between nonreactive liquid metals and metal surfaces due to the strong metallic bonding. By contrast, poor wettability generally forms between nonreactive liquid metals and oxide surfaces due to the weak van der Waals bonding between the liquid metal and the oxide layer. When the patterning was added, the device efficiency tended to decrease from 8.6% to 10.5%.
Highlights
Thin-film photovoltaic (PV) technology, such as CdTe and CIGSsolar cells, has been well developed and has opened up the possibility of integrating solar modules into buildings [1]
A 130 nm-thick Al2O3 layer was deposited by RF magnetron sputtering, and the Al2O3 pattern was prepared by conventional photolithography and wet etching using buffered oxide etchant (BOE) solution
The CZTSSe film was synthesized by a sulfo-selenization reaction using rapid thermal processing (RTP)
Summary
Thin-film photovoltaic (PV) technology, such as CdTe and CIGSsolar cells, has been well developed and has opened up the possibility of integrating solar modules into buildings [1]. The highest power conversion efficiency of a CZTSSe cell has been reported as 12.6%; these cells were produced using the hydrazine solution process, which requires careful management to prevent explosions [4]. Our group has been developing two-step processes using metal precursor stacks and chalcogen reactants. A 12.3% power conversion efficiency was reported for CZTSSe solar cells produced using the two-step process with a metal precursor and Se/SeS2 powder [6]. The Al2O3 layer was deposited by RF magnetron sputtering, and the Al2O3-patterned Mo/SLG substrate was prepared by photolithography. The Sn/Cu/Zn metal precursor was deposited by DC magnetron sputtering, and a sulfo-selenization process was conducted using rapid thermal processing (RTP)
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