Self-aligned selective-emitter plasma-etchback and passivation process for screen-printed silicon solar cells

Abstract

We studied whether plasma-etching techniques can use standard screen-printed gridlines as etch masks to form self-aligned, patterned-emitter profiles on multicrystalline-silicon (mc-Si) cells from Solarex. We conducted an investigation of plasma deposition and etching processes on full-size mc-Si cells processed in commercial production lines, so that any improvements obtained would be immediately relevant to the PV industry. This investigation determined that reactive ion etching (RIE) is compatible with using standard, commercial, screen-printed gridlines as etch masks to form self-aligned, selectively doped emitter profiles. This process results in reduced gridline contact resistance when followed by plasma-enhanced chemical vapor deposition (PECVD) treatments, an undamaged emitter surface easily passivated by plasma-nitride, and a less heavily doped emitter between gridlines for reduced emitter recombination. This allows for heavier doping beneath the gridlines for even lower contact resistance, reduced contact recombination, and better bulk defect gettering. Our initial results found a statistically significant improvement of about half an absolute percentage point in cell efficiency when the self-aligned emitter etchback was combined with a PECVD-nitride surface passivation treatment. Some additional improvement in bulk diffusion length was observed when a hydrogen passivation treatment was used in the process. We attempted to gain additional benefits from using an extra-heavy phosphorus emitter diffusion before the gridlines were deposited. However, this required a higher plasma-etch power to etch back the deeper diffusion and keep the etch time reasonably short. The higher power etch may have damaged the surface and the gridlines so that improvement due to surface passivation and reduced gridline contact resistance was inhibited.