Abstract

Bimetal ‘‘T-gate’’ structures have been obtained by selective Ti-Al plasma etching. These structures have been used as self-aligned masks for ohmic contact metallizations. Titanium Schottky diodes exhibit a barrier height of 720 mV with an ideality factor of 1.17. By using only the optical lithographic process, normally on GaAs metal Schottky field-effect transistors (MESFET) of 1.3-μm gate length have been fabricated. Transconductance up to 142 mS mm−1 and pinchoff voltage around −2 V have been measured.

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