Self-aligned notched planar InP transferred-electron oscillators

Abstract

A procedure is described for the fabrication of planar InP transferred-electron oscillators (TEO's). In this procedure, a localized high resistivity region is self-aligned to the cathode contact. The self-aligned structure, which also included a selectively implanted n+ anode, produced a pulsed power output of 220 mW with an efficiency of 9.5 percent at 9.1 GHz and a CW power output of 80 mW with an efficiency of 5.3 percent at 5.5 GHz. This is the highest reported power output and efficiency for a planar transferred-electron device in this frequency range.