Abstract
Depletion-mode junction field-effect transistors (JFET's) with InGaAs p-n junctions grown on compensated Fe:InP or highly resistive In 0.52 Al 0.48 As isolation layers grown on n+-InP substrates have been fabricated using a combination of molecular-beam epitaxy and metalorganic chemical vapor deposition growth techniques. Using a self-aligned gate technology with a 1-µm gate length, devices with high transconductance (80 mS/mm), low leakage current (<100 nA), and a gate-to-source capacitance of 0.4 pF have been fabricated. This is apparently the first report where InP-based alloy FET's have been fabricated on an isolated n+-substrate. This structure has application to monolithically integrated photoreceivers.
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