Abstract
A self-adjusting sensing circuit spin-torque transfer magnetic random access memory (STT-MRAM) is proposed. STT-MRAM is considered to be the most promising candidate among the new emerging memories. However, read performance has emerged as a new bottleneck, because of its low tunnelling magneto-resistance ratio (TMR) and low read current. The proposed self-adjusting sensing circuit shows an improved sensing margin, overcoming the weaknesses of the STT-MRAM. The proposed circuit using Verilog-A model, a 65 nm complementary metal–oxide–semiconductor process also evaluated, and Monte Carlo analysis. The results of analysis show that the proposed circuit ensures a certain sensing margin, which is more than 200 mV in TMR 150% and about 50 mV in TMR 100%.
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