Abstract
AbstractThe potential distribution of bipolar, strongly reverse‐biased pn‐junctions can be described by a double obstacle problem for the Laplacian. The problem is solved by a self‐adaptive finite‐element method involving automatic termination criteria for the iterative solver, local error estimation and local mesh refinement. Special attention is paid to the efficient resolution of the geometries typically arising in semiconductor device simulation. The algorithm is applied to a reverse‐biased pn‐junction with multistep field plate and stop electrode to illustrate its efficiency and reliability.
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