Abstract
The effect of selenization temperature on the properties of Cu2ZnSn(S,Se)4 (CZTSSe) films using a Se metal-organic source was investigated. The metal-organic compound di-tert-butyl-selenide (DTBSe) was used as a Se source to selenize the Cu2ZnSnS4 (CZTS) films deposited by magnetron sputtering and crystallized by post-annealing on soda-lime glass. The selenization was conducted in the metal-organic chemical vapor deposition system and was carried out at temperature ranging from 300 to 390 °C for 30 min to prevent element loss, such as Zn, Sn. CZTS film was transformed into CZTSSe with various Se contents depending on the selenization temperature for 30 min. The crystalline properties were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy with a 514 nm laser. Energy-dispersive X-ray spectroscopy (EDS) was utilized for stoichiometric characterization. The depth profiling of thin films was measured by auger electron spectroscopy (AES) to confirm distribution of the elements. And the band gap of CZTSSe thin films measured by UV–Vis–NIR spectrometry varied from 1.5 to 0.95 eV along with content of Se.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
