Abstract
In this paper, selenium passivation of the CuInSe2 for high-efficiency solar cells is studied through first-principles calculations. It is revealed that, the formation energy of Se-terminated surface and the surface with Se overlayer are different. The surface with Se overlayer are more stable, it guarantees an ideal growth that can efficiently limit the formation of point defects. It is further proved that the unique surfaces of CuInSe2 play the critical roles on the high efficiency of the based thin film solar cell. It is the significant foundation for improving the growth of related solar cells and it is very important for the formation and control of related defects in the growth of CIS. Due to the different surface energy and property, the study of the growth of Selenium passivation of CIS is very important.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IOP Conference Series: Earth and Environmental Science
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
