Abstract
In article number 2100401, Jang-Sik Lee and co-workers report an atomic switch selector device with a multilayer structure for cross-point memory array architecture. The multilayer structure enables the formation of controlled filaments by preventing excessive influx of silver ions, resulting in ten-billion on and off difference and high on-current density for ultra-high-density memory.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
