Abstract
ABSTRACTLow temperature selective silicon epitaxy was studied over a range of process pressures and HCI flows using a SiH2Cl2/HCl/H2based chemistry. Thermodynamic modelling was carried out with the aid of the SOLGAS program to investigate the effect of process pressure, HCI flow rate, and leaks on the distribution of gas phase species. Selectivity results are interpreted in terms of the defect microchemistry on SiO2surfaces.
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