Selectively-Grown Quantum Dot Active Region Lasers

Abstract

Nanopatterns formed by dense nanoscale (20–30nm diameter) block copolymer lithography and subsequent selective area MOVPE were utilized to realize room temperature operation of quantum dot (QD) active region laser diodes on InP substrates, by employing a carrier-injection layer adjacent to the QDs. Initial studies focused on InGaAs QDs grown on GaAs substrates, which exhibit relatively broad photoluminescence (PL) emission linewidths (FWHM~93meV at RT). Atomic force microscopy measurements reveal that a wide distribution of QD thickness variations correlates well to the observed broad PL linewidths, based on the simulated range of QD transitions. The fabricated edge-emitting devices on InP substrate exhibit lasing emission near <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.57\sim 1.67~\mu \text{m}$ </tex-math></inline-formula> at room temperature with a threshold current density as low as 1.6 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> for 4mm-long devices. The observed dependency of device characteristics, such as threshold current density and lasing wavelength, on the cavity length and on the heat sink temperature suggests the dominant lasing transition energy corresponds to the QD excited state, except for the longest cavity length devices (L = 4mm) which operate on the QD ground state transition near room temperature. We believe these data represent the only reports of lasers in this wavelength region employing QDs formed by diblock co-polymer lithography and selective area MOVPE growth. These data also suggest that QD height variations need to be further reduced, through MOVPE growth optimization, to achieve higher optical gain from the QD ground state transition.