Abstract
Abstract With a motivation to investigate the simultaneous effect of sintering temperature and sintering time in tandem on defect distributions in polycrystalline undoped ZnO a new technique called Multi-step sintering (MSS) has been deliberately designed. Systematic investigations on structural parameters suggest the rigorous defect propagation along a-axis of the unit cell. We report the unwavering nature of Zinc interstitials (Zn i ) and the complexes of Zn i with oxygen vacancies (V o ) with sintering temperature. The enhanced and broad green emission in Photoluminescence spectroscopy reveals the existence of surplus V o in the sample. The band gap narrowing at 800 °C and enhanced Raman modes in Raman scattering experiment confirms the existence of excess oxygen vacancies and make MSS successful technique to tailor the intrinsic defects without any extrinsic doping.
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