Abstract
To improve optical-integrated device characteristics, namely, characteristic temperature and modulation speed, we investigated selective-area growth of InGaAlAs. When the band-gap wavelength is over 1.3 μm, the residual carrier concentration in InGaAlAs is the same order as that in InGaAsP. The photoluminescence spectra of InGaAlAs and InGaAsP multiple-quantum-well structures grown by selective-area growth are similar. Interfaces are abrupt and growth planes are flat, even in the case of the InGaAlAs selective-area growth. Moreover, light-current characteristics of an InGaAlAs 1.55 μm distributed feedback laser with an integrated modulator are also similar to those of an InGaAsP laser. These results indicate that selective-area growth of InGaAlAs will result in superior device properties.
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