Selective-area atomic layer deposition with microcontact printed self-assembled octadecyltrichlorosilane monolayers as mask layers

Abstract

Selective-area atomic layer deposition (ALD) was studied using microcontact printed self-assembled monolayers (SAM) as growth preventing mask layers. Patterned self-assembled octadecyltrichlorosilane (OTS, H 3C(CH 2) 17SiCl 3) monolayers were prepared on the silicon (100) surface by an elastomeric stamp which had 1.5 µm wide parallel print lines with 1.5 µm wide spaces in between. Passivation properties of the monolayers against ALD growth were verified by ALD processes of iridium and TiO 2. Iridium was grown at 225 °C and TiO 2 at 250 °C. The quality of SAM was controlled by water contact angle measurements. Patterned iridium and TiO 2 films were studied with field emission scanning electron microscope and energy dispersive X-ray spectrometer.