Abstract
A novel process for narrow, ca. 100 nm wide, airgap formation based on chemical selectivity is presented. First, chemically modified sites are induced at the Ta(N)/SiC interface during patterning operations. Then, the SiO 2 material lying between copper lines is locally removed by vapor HF exposure, leading to air cavity formation between closely packed interconnects. Based on simulations this sidewall airgap concept has a promising potential for very narrow interline dielectrics in future interconnect generations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
