Abstract
A study of the technology of selective oxidation of the buried AlGaAs layer used as an aperture layer in the structure of a Vertical-cavity surface-emitting laser has been carried out. Oxidation process was made as thermal oxidating in a humidified nitrogen atmosphere. The conditions of the oxidation process are described, images of the oxidation results and the dependence of the growth rate of the oxidized layer on the process temperature are presented. A technology for the formation of an oxide current aperture has been developed for vertical cavity surface emitting lasers with a generation wavelength of 850 nm, which makes it possible to accurately control the size and shape of the resulting aperture.
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