Abstract
AbstractAn ultrathin InP template with extremely low defect density was realized on Si substrate using wet etching and wafer direct bonding technique. On top of the InP/Si substrate, asymmetric SiO2 mask pattern on one side of the arrayed waveguides was prepared and selective metal‐organic vapor‐phase epitaxy (MOVPE) growth has been demonstrated. According to the cross‐sectional scanning electron micrograph (SEM) images, gradually varied height of GaInAs/InP multiple quantum well (MQW) structures were realized on the substrate and photo‐luminescence (PL) measurement showed different band‐gaps of the MQW structures. Our approach is of importance to control the in‐plane band‐gap energy for the integration of InP‐based various functional devices on Si substrate. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
