Abstract
Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP structures on mask-patterned planar InP substrates was studied. Ridge structures with widths around 2 /spl mu/m were selectively formed on open stripe regions between pairs of mask stripes. For such narrow regions, not only lateral gas phase diffusion but also surface migration contribute to enhanced growth rate compared to growth on unmasked wafers. The surface migration processes of metalorganic species were investigated to obtain flat top surfaces in the ridge structures. Selectively grown InGaAs/InGaAsP MQW structures with flat interfaces were obtained. Composition shifts in selectively grown InGaAs layers provided an additional bandgap energy shift in thickness-modulated InGaAs quantum wells. A shift as large as 200 nm in the photoluminescence peak wavelength was obtained for simultaneously grown multiple quantum well ridge structures while maintaining flat interfaces. >
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