Selective liquid-phase electroepitaxy of GaAs on GaAs-coated Si substrates

Abstract

Selective growth of GaAs on GaAs-coated Si substrate is performed by liquid phase electroepitaxy (LPEE) in which dc current flows from the substrate to the melt in the conventional liquid-phase epitaxy. The GaAs on Si substrate is prepared by metallorganic chemical vapor deposition. The lateral overgrowth on the mask is obtained in the LPEE. The selective LPEE growth mechanism is discussed. The growing species falling on the mask is pulled into the window region by electromigration resulting in the lateral growth.