Abstract

Under irradiation of amorphous AsxSe100−x films by band-gap light, it was observed that lateral mass transport of the film material change the direction of movement in the region where topological structural transition occurs (4 < x < 5 at.%.). It was detected that the rate of mass transport increases essentially with temperature and reaches the maximum near the glass-transition temperature, Tg. We propose a model based on the lateral photo-Dember effect that qualitatively describes the observed phenomenon.

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