Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy

Abstract

Controlled growth of ZnSe and ZnCdSe nanowires is demonstrated by molecularbeam epitaxy using Au or Ag catalyst films in the temperature range400–550 °C.The highest density of small-diameter (10 nm), highly-crystalline ZnSe nanowires is achieved by usingAu at 400 °C. Direct growth onto transmission electron microscope grids clearly indicates a tip-growthregime. Pre-patterning of the catalyst film allows highly selective ZnSe deposition asprobed by photoluminescence and Raman spectroscopy. In similar conditions, the additionof Cd vapour in the MBE reactor allows the synthesis of ZnCdSe ternary nanowires.