Abstract
We have demonstrated the selective area growth of stacked self-assembled InAs quantum dot (QD) arrays in the desired regions on a substrate and confirmed the photoluminescence (PL) emission exhibited by them at room temperature. These InAs QDs are fabricated by the use of a specially designed atomic force microscope cantilever referred to as the Nano-Jet Probe (NJP). By using the NJP, two-dimensional arrays with ordered In nano-dots are fabricated in the desired square regions on a GaAs substrate and directly converted into InAs QD arrays through the subsequent annealing by the irradiation of As flux. By using the converted QD arrays as strain templates, self-organized InAs QDs are stacked. These stacked QDs exhibit the PL emission peak at a wavelength of 1.02 μm.
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