Abstract
Selective growth of amorphous silica nanowires on a silicon wafer deposited with Pt thinfilm is reported. The mechanism of nanowire growth has been established to follow thevapour liquid solid (VLS) model via the PtSi phase acting as the catalyst. Nanowires growwith diameters ranging from 50 to 500 nm. These bottom-up grown nanowiresexhibit photoluminescence with a stable emission of blue light at 430 nm underexcitation. The effect of varying the seed layer thickness (Pt film) from 2 to 100 nm hasbeen studied. It is observed that, above 10 nm thickness, a continuous layer ofPt2Si re-solidifies on the surface, inhibiting the growth of nanowires. The selectivity to the Ptthickness has been exploited to create regions of nanowires connected to conducting silicide(Pt2Si) simultaneously in a single furnace treatment. This novel approach has opened thegateways for realizing hybrid interconnects in silicon for various nano-optical applicationssuch as the localization of light, low-dimensional waveguides for functional microphotonics,scanning near-field microscopy, and nanoantennae.
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