Abstract
AbstractWe propose and demonstrate a new mask material of AlGaAs native oxide for selective area metalorganic vapor phase epitaxy (MOVPE) which has several advantages over conventional SiNx or SiO2 masks. GaAs selective area growth occurs on masked substrate of AlGaAs native oxide whose Al composition is 0.4, and the wire structures with trapezoidal cross section are formed along ]100] direction on (001) GaAs substrates with line & space mask pattern. Furthermore, after annealing the selectively grown GaAs wire samples, GaAs layers can be regrown with atomically smooth surface, in which GaAs wires are perfectly buried. The results show that this novel selective area MOVPE technique using AlGaAs native oxide masks are promising for quantum nano-structure device fabrication.
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