Abstract
The first successful selective growth of high quality InGaAs/InP layers was demonstrated by gas source molecular beam epitaxy (MBE) with atomic hydrogen irradiation. It was found that high purity InP layers were obtained under the selective growth conditions and selective growth of multiple quantum well (MQW) layers with high optical quality was achieved. The photoluminescence (PL) measurement for selectively grown MQWs indicates that the PL peak-wavelengths did not depend on the mask stripe width, whereas significant peak-wavelength shift was observed when the stripe spacing width varied. >
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