Abstract
Selective epitaxial growth of GaAs on GaAs and In 0.49Ga 0.51P surfaces, using photo-enhanced organomettalic chemical vapor deposition, was investigated. The growth rate dependence on illumination intensity, trimethylgallium partial pressure, and temperature is reported. In-situ patterning and three-dimensional shaping during growth of GaAs/InGaP burried heterostructures, are demonstrated. The experimental results are in good agreement with a simple model, in which the decomposition of absorbed trimethylgallium is assisted by surface recombination of photo-exicited free carriers.
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