Abstract
A selective method for growing high-quality spinel-type epitaxial Fe3O4(0 0 1) or γ-Fe2O3(0 0 1) films was developed using conventional planar-type sputtering by controlling the flow rate of oxygen gas . Although magnetization of the oxide films is close to that of Fe3O4 or γ-Fe2O3 for all , the room-temperature resistivity and the Fe3+ and Fe2.5+ composition ratios of the films are dependent on . The films for and are identified as Fe3O4 and γ-Fe2O3 films, respectively. All the results suggest that Fe3O4 films are obtained only when sputtered in the metal mode, and γ-Fe2O3 films are obtained in the oxide mode.
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