Selective Growth of Energy-Band-Controllable In1−xGaxAsyP1−y Submicron Wires in V-Shaped Trench on Si

Abstract

The In1−xGaxAsyP1−y submicron wires with adjustable wavelengths directly grown by metalorganic chemical vapor deposition on a V-groove-patterned Si (001) substrate are reported in this paper. To ensure the material quality, aspect ratio trapping and selective area growth methods are used. By changing the parameters in the epitaxy process, we realize the adjustment of the material energy band of In1−xGaxAsyP1−y submicron wires. By further optimizing the growth conditions, we realize high-quality submicron wires. The morphology of the submicron wires is characterized by scanning electron microscopy and transmission electron microscopy. Through high-resolution X-ray diffraction measurement, it is disclosed that the lattice of the optimized In1−xGaxAsyP1−y part matches that of InP. A PL spectrum test shows that the PL spectrum peak is from 1260 nm to 1340 nm. The In1−xGaxAsyP1−y can be used as a well material or barrier material in a quantum well, which would promote the development of silicon-based lasers.