Selective growth of diamond using an iron catalyst

Abstract

Selective growth of diamond was carried out on the silicon substrate with patterned iron films, using the radio frequency plasma chemical vapor deposition method. Iron film was used to increase the nucleation density of diamond. Although the density of diamond particles on the silicon substrate exposed in CF4 plasma was on the order of 103 cm−2, the iron film enhanced the density up to the order of 108 cm−2. In the photolithography process for patterning the iron film, the formation of iron carbide (Fe-C) was caused by carbon atoms diffused from the photoresist film onto the iron film during baking of the photoresist film. It was confirmed that the presence of Fe-C was effective in enhancing diamond nucleation.