Abstract
Selected-area deposition (SAD) of diamond films was achieved on silicon substrates with carbon film mask by hot filament chemical vapor deposition. Needle tip scraped lines were used to grow diamond films. Scanning electron microscope (SEM) investigation demonstrates that highly selective and sharp edged diamond films were produced. The results also demonstrate that the proper substrate temperature is very important for diamond selective growth in this deposition process. Since the enhancement of diamond growth was not observed on the needle tip scraped area of Si wafer with diamond powder scratching, the selective growth was considered to be closely correlated to silicon carbide formed during carbon film deposition and the residual carbon in the scraped area.
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